Postdoctoral Research Associate · Carnegie Mellon University
I’m a Postdoctoral Research Associate at Carnegie Mellon University, working with Professor Xu Zhang. My research connects two-dimensional materials, device physics, and nanoelectronic integration.
I earned my Ph.D. in Materials Science and Engineering at KAUST, where I worked with Professor Mario Lanza. My work spans hBN gate dielectrics, transistor engineering, memristor reliability, and the integration of 2D materials into microchips.
From two-dimensional materials to electronic devices and integrated circuits.
ACS Nano · 2025
Abstract — summary
A 4 nm hBN gate dielectric and platinum electrode enable MoS₂ transistors with a threshold voltage of 0.46 V and an ON/OFF current ratio above 10⁵. Low gate leakage and continued operation after 1,000 switching cycles demonstrate the potential of ultrathin hBN for nanoscale transistors.
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Nature Electronics · 2024
Abstract — summary
Platinum and tungsten gate electrodes suppress leakage through CVD-grown hBN, enabling its use as a dielectric in 2D transistors. Measurements across 867 devices, including structures on a CMOS microchip, connect electrode selection with improved dielectric reliability.
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Advanced Materials · 2021
Abstract — summary
Local defects can limit the performance of devices made from 2D materials. This study shows that vertical hBN memristors tolerate many of these defects because current follows localized conductive paths, offering a route to circuits with improved yield and consistency.
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